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Publications
Journal: Journal of Applied Physics
Number of publications: 132024
- Karol Kawka, Paweł Kempisty, Konrad Sakowski , Stanisław Krukowski, Michał Boćkowski, David Bowler, Akira Kusaba, Augmentation of the electron counting rule with Ising model, Journal of Applied Physics, 135 (22) 2024, p. 225302. See in PBN
2022
- Ashfaq Ahmad, Paweł Strąk, Konrad Sakowski , Jacek Piechota, Paweł Kempisty, Agata Kamińska, Stanisław Krukowski, Optical properties of polar and nonpolar GaN/AlN multiquantum well systems—DFT study, Journal of Applied Physics, 132 (16) 2022, p. 164306-1-8. See in PBN
- Ashfaq Ahmad, Paweł Strąk, Paweł Kempisty, Konrad Sakowski , Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michał Leszczyński, Zbigniew Żytkiewicz, Grzegorz Muzioł, Eva Monroy, Agata Kamińska, Stanisław Krukowski, Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality, Journal of Applied Physics, 132 (6) 2022, p. 64301-1-9. See in PBN
2016
- Agata Kamińska, Paweł Strąk, Jolanta Borysiuk, Kamil Sobczak, Jarosław Domagała, Mark Beeler, Ewa Grzanka, Konrad Sakowski , Stanisław Krukowski, Ewa Monroy, Correlation of optical and structural properties of GaN/AlN multi-quantum wells - ab initio and experimental study, Journal of Applied Physics, 2016. See in PBN
- Jolanta Borysiuk, Konrad Sakowski , Piotr Dróżdż, Krzysztof Korona, Kamil Sobczak, Grzegorz Muzioł, Czesław Skierbiszewski, Agata Kamińska, Stanisław Krukowski, Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N, Journal of Applied Physics, 2016. See in PBN
- Agata Kamińska, Dawid Jankowski, Paweł Strąk, Krzysztof Korona, M. Beeler, Konrad Sakowski , Ewa Grzanka, Jolanta Borysiuk, Kamil Sobczak, E. Monroy, Stanisław Krukowski, High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells - experimental and theoretical analysis, Journal of Applied Physics, 2016. See in PBN
2015
- Paweł Strąk, Konrad Sakowski , Paweł Kempisty, Stanisław Krukowski, Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab initio approach, Journal of Applied Physics, 118 (9) 2015, p. 95705. See in PBN
2014
- Stanisław Krukowski, Paweł Kempisty, Paweł Strąk, Konrad Sakowski , Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces, Journal of Applied Physics, 115 (4) 2014, p. 43529. See in PBN
2012
- Paweł Kempisty, Paweł Strąk, Stanisław Krukowski, Konrad Sakowski , Erratum: "Ab inito studies of electronic properties of bare GaN(0001) surface", Journal of Applied Physics, 111 (10) 2012, p. 109905. See in PBN
- Konrad Sakowski , Leszek Marcinkowski , Stanisław Krukowski, Szymon Grzanka, Elżbieta Litwin-Staszewska, Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes, Journal of Applied Physics, 2012. See in PBN
2009
- Paweł Kempisty, Stanisław Krukowski, Paweł Strąk, Konrad Sakowski , Ab initio studies of electronic properties of bare GaN(0001) surface, Journal of Applied Physics, 106 (5) 2009, p. 54901. See in PBN
2008
- P. Kacman, Piotr Sankowski , Jacek Majewski, Modeling of bias anomaly in (Ga,Mn)As structures, Journal of Applied Physics, 2008. See in PBN
- Perla Kacman, Piotr Sankowski , Jacek Majewski, Modeling of bias anomaly in (Ga,Mn)As tunneling magnetoresistance structures, Journal of Applied Physics, 2008. See in PBN